AOWF4N60
MOSFET N-CH 600V 4A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOWF4N60 is an N-Channel MOSFET designed for high-voltage applications. This component features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4 A at 25°C (Tc). With a maximum power dissipation of 25 W (Tc), it is suitable for demanding power management tasks. The on-resistance (Rds On) is specified at a maximum of 2.3 Ohms at 2 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 14.5 nC at 10 V and an input capacitance (Ciss) of 640 pF at 25 V. The AOWF4N60 is housed in a TO-262F package, facilitating through-hole mounting. This device operates within an ambient temperature range of -55°C to 150°C. It finds application in power supplies, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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