Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

AOWF450A70

Banner
productimage

AOWF450A70

N

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. aMOS5™ series AOWF450A70 is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a 700V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C (Tj). The device exhibits a maximum on-resistance (Rds On) of 450mOhm at 2.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1115 pF at 100V Vds. The AOWF450A70 has a maximum power dissipation of 26W (Tc) and is rated for an operating temperature range of -55°C to 150°C (TJ). It is supplied in a TO-262F package. This MOSFET is utilized in power supply, industrial, and automotive applications.

Additional Information

Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tj)
Rds On (Max) @ Id, Vgs450mOhm @ 2.3A, 10V
FET Feature-
Power Dissipation (Max)26W (Tc)
Vgs(th) (Max) @ Id3.6V @ 250µA
Supplier Device PackageTO-262F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1115 pF @ 100 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AOB095A60L

MOSFET N-CH 600V 38A TO263

product image
AOD280A60

MOSFET N-CH 600V 14A TO252

product image
AOD600A60

MOSFET N-CH 600V 8A TO252