AOWF412
MOSFET N-CH 100V 7.8A/30AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOWF412, an N-Channel MOSFET from their SDMOS™ series. This through-hole component offers a drain-source voltage of 100V and a continuous drain current capability of 7.8A at ambient temperature and 30A at case temperature. Key parameters include a maximum Rds(on) of 15.8mOhm at 20A and 10V, with gate drive voltages specified between 7V and 10V. The device features a maximum gate charge of 54 nC at 10V and input capacitance (Ciss) of 3220 pF at 50V. Power dissipation is rated at 2.1W (Ta) and 33W (Tc). Packaged in a TO-262F configuration, the AOWF412 is suitable for applications such as power switching and motor control across various industrial sectors. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: SDMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 50 V |
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