AOWF360A70
MOSFET N-CH 700V 12A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel Power MOSFET, part number AOWF360A70, is designed for high-voltage applications. This component offers a 700V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tj). The on-resistance (Rds On) is rated at a maximum of 360mOhm at 6A and 10V gate-source voltage. Featuring a gate charge (Qg) of 22.5 nC at 10V and input capacitance (Ciss) of 1360 pF at 100V, this device provides efficient switching characteristics. The MOSFET is housed in a TO-262F package, suitable for through-hole mounting. With a maximum power dissipation of 29.5W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the AOWF360A70 is a robust solution for power conversion and management in industrial and consumer electronics.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tj) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 100 V |
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