AOWF25S65
MOSFET N-CH 650V 25A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOWF25S65, offers a 650 V breakdown voltage and a continuous drain current of 25 A at 25°C (Tc). This component features a maximum on-resistance of 190 mOhm at 12.5 A and 10 V. The AOWF25S65 is housed in a TO-262F package, designed for through-hole mounting, and has a maximum power dissipation of 28 W (Tc). Key electrical specifications include a gate charge of 26.4 nC at 10 V and input capacitance of 1278 pF at 100 V. This device is suitable for applications in power supply design, industrial motor control, and lighting systems. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±30 V.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1278 pF @ 100 V |
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