AOWF20S60
MOSFET N-CH 600V 20A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ N-Channel Power MOSFET, part number AOWF20S60, offers a drain-source voltage of 600 V and a continuous drain current of 20A at 25°C. This device features a maximum on-resistance of 199mOhm at 10A and 10V gate-source voltage. With a gate charge of 19.8 nC at 10V and input capacitance of 1038 pF at 100V, the AOWF20S60 is designed for efficient power switching. The component dissipates up to 28W at 25°C and operates across a temperature range of -55°C to 150°C. Packaged in a TO-262F configuration, this MOSFET is suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1038 pF @ 100 V |
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