AOWF190A60C
MOSFET N-CH 600V 20A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS5™ series AOWF190A60C is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a continuous drain current rating of 20A (Tj) and a low on-resistance of 190mOhm at 10V Vgs and 7.6A Id, minimizing conduction losses. The AOWF190A60C is packaged in a TO-262F (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting, offering a maximum power dissipation of 27W (Tc). Key parameters include a gate charge (Qg) of 34 nC (Max) at 10V Vgs and input capacitance (Ciss) of 1935 pF (Max) at 100V Vds. This MOSFET is suitable for applications in power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tj) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1935 pF @ 100 V |
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