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AOWF190A60

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AOWF190A60

N

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOWF190A60 is an N-Channel Power MOSFET from the aMOS5™ series, housed in a TO-262F package. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 27W (Tc). The AOWF190A60 offers a low on-resistance (Rds On) of 190mOhm at 7.6A and 10V, with a gate charge (Qg) of 34 nC at 10V. Input capacitance (Ciss) is rated at 1935 pF at 100V, and the device operates within an extended temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 7.6A, 10V
FET Feature-
Power Dissipation (Max)27W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-262F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1935 pF @ 100 V

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