AOWF15S65
MOSFET N-CH 650V 15A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ series AOWF15S65 is an N-Channel power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current capability of 15A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 290mOhm at 7.5A and 10V gate drive. With a maximum power dissipation of 28W (Tc), it is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 17.2 nC at 10V and an input capacitance (Ciss) of 841 pF at 100V. The AOWF15S65 is housed in a TO-262F package, facilitating through-hole mounting. This MOSFET is utilized in applications such as power supplies, industrial motor control, and lighting solutions.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 841 pF @ 100 V |
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