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AOWF15S60

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AOWF15S60

MOSFET N-CH 600V 15A TO262F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOWF15S60 is an N-Channel MOSFET in the aMOS™ series, designed for power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 15A at 25°C, with a maximum power dissipation of 27.8W. The device exhibits a typical Rds On of 290mOhm at 7.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 15.6 nC and an input capacitance (Ciss) of 717 pF at 100V. Packaged in a TO-262F (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting, it operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for industrial power supplies, lighting, and renewable energy systems.

Additional Information

Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs290mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)27.8W (Tc)
Vgs(th) (Max) @ Id3.8V @ 250µA
Supplier Device PackageTO-262F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds717 pF @ 100 V

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