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AOWF12T60P

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AOWF12T60P

MOSFET N-CH 600V 12A TO262F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel MOSFET, AOWF12T60P. This device features a 600V drain-source breakdown voltage and a continuous drain current of 12A at 25°C case temperature. With a maximum on-resistance of 520mOhm at 6A and 10V gate-source voltage, it offers efficient power switching. The AOWF12T60P is housed in a TO-262F package, suitable for through-hole mounting. Key parameters include a gate charge of 50 nC and input capacitance of 2028 pF at 100V. This MOSFET is designed for applications requiring high voltage and moderate current handling, commonly found in power supply units and industrial motor control applications. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs520mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)28W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-262F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2028 pF @ 100 V

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