AOWF12N65
MOSFET N-CH 650V 12A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Alpha & Omega Semiconductor Inc. AOWF12N65 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 650V and a continuous Drain current (Id) of 12A at 25°C. With a maximum power dissipation of 28W (Tc), it is suitable for demanding power conversion tasks. The device offers a low on-resistance (Rds On) of 720mOhm at 6A and 10V, with a gate charge (Qg) of 48 nC at 10V and input capacitance (Ciss) of 2150 pF at 25V. The AOWF12N65 utilizes advanced MOSFET technology and is housed in a TO-262F package, facilitating through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This component finds application in power supplies, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V |
Request a Quote
Clients Also Buy
AONS520A70
N
AONV110A60
N
AOK065A60FD
LINEAR IC
