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AOWF12N50

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AOWF12N50

MOSFET N-CH 500V 12A TO262F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOWF12N50 is an N-Channel MOSFET designed for high-voltage applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current of 12A at 25°C (Tc). With a maximum on-resistance (Rds On) of 520mOhm at 6A and 10V, it offers efficient power handling with a dissipation rating of 28W (Tc). The AOWF12N50 is housed in a TO-262F package, facilitating through-hole mounting. Its gate charge (Qg) is 37 nC at 10V, and input capacitance (Ciss) is a maximum of 1633 pF at 25V. This device operates within a temperature range of -55°C to 150°C (TJ) and is suitable for power supply units and industrial motor control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs520mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)28W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-262F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1633 pF @ 25 V

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