AOWF11S65
MOSFET N-CH 650V 11A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ series N-channel MOSFET, part number AOWF11S65, offers a 650V drain-to-source voltage rating and a continuous drain current capability of 11A at 25°C (Tc). This through-hole component features a low on-resistance of 399mOhm maximum at 5.5A and 10V, with a gate charge of 13.2 nC maximum at 10V. The input capacitance (Ciss) is rated at 646 pF maximum at 100V. The device is housed in a TO-262F package, suitable for applications requiring robust power handling up to 28W (Tc). Its typical applications include power factor correction, switch mode power supplies, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 100 V |
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