AOWF11S60
MOSFET N-CH 600V 11A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ series AOWF11S60 is a 600V N-Channel MOSFET designed for efficient power switching applications. This component features a continuous drain current (Id) of 11A (Tc) and a maximum power dissipation of 28W (Tc). With a drain-to-source voltage (Vdss) of 600V and a low Rds On of 399mOhm at 3.8A and 10V, it offers optimized performance for demanding power conversion tasks. Key characteristics include an input capacitance (Ciss) of 545pF (Max) at 100V and a gate charge (Qg) of 11nC at 10V. The AOWF11S60 is housed in a TO-262F package, suitable for through-hole mounting, and operates within an industrial temperature range of -55°C to 150°C. This MOSFET is utilized in power supplies, motor control, and lighting applications.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
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