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AOWF11S60

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AOWF11S60

MOSFET N-CH 600V 11A TO262F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. aMOS™ series AOWF11S60 is a 600V N-Channel MOSFET designed for efficient power switching applications. This component features a continuous drain current (Id) of 11A (Tc) and a maximum power dissipation of 28W (Tc). With a drain-to-source voltage (Vdss) of 600V and a low Rds On of 399mOhm at 3.8A and 10V, it offers optimized performance for demanding power conversion tasks. Key characteristics include an input capacitance (Ciss) of 545pF (Max) at 100V and a gate charge (Qg) of 11nC at 10V. The AOWF11S60 is housed in a TO-262F package, suitable for through-hole mounting, and operates within an industrial temperature range of -55°C to 150°C. This MOSFET is utilized in power supplies, motor control, and lighting applications.

Additional Information

Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs399mOhm @ 3.8A, 10V
FET Feature-
Power Dissipation (Max)28W (Tc)
Vgs(th) (Max) @ Id4.1V @ 250µA
Supplier Device PackageTO-262F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds545 pF @ 100 V

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