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AOWF11N70

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AOWF11N70

MOSFET N-CH 700V 11A TO262F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOWF11N70 is an N-Channel MOSFET with a drain-source breakdown voltage of 700 V. This device features a continuous drain current capability of 11A at 25°C and a maximum power dissipation of 28W. The on-resistance (Rds On) is specified at 870mOhm maximum at 5.5A drain current and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 45 nC maximum at 10V and an input capacitance (Ciss) of 2150 pF maximum at 25V. The AOWF11N70 is housed in a TO-262F package with through-hole mounting and operates within a temperature range of -55°C to 150°C. This component is suitable for applications in power supply units, lighting, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs870mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)28W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-262F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 25 V

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