AOWF11N60
MOSFET N-CH 600V 11A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOWF11N60, an N-Channel MOSFET designed for demanding applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 11A at 25°C. With a maximum power dissipation of 27.8W (Tc), it is suitable for power conversion and management systems. The AOWF11N60 exhibits a typical on-resistance (Rds On) of 650mOhm at 5.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 37 nC and input capacitance (Ciss) of 1990 pF. Packaged in a TO-262F configuration, this component is suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). Its robust design finds utility in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 25 V |
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