AOWF10N65
MOSFET N-CH 650V 10A TO262FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOWF10N65 is a 650V N-Channel Power MOSFET designed for demanding applications. This device features a continuous drain current of 10A at 25°C and a maximum power dissipation of 25W (Tc). With a low Rds On of 1 Ohm at 5A and 10V, the AOWF10N65 offers efficient switching performance. Key electrical characteristics include a gate charge of 33 nC (Max) at 10V and an input capacitance of 1645 pF (Max) at 25V. The MOSFET is housed in a TO-262F package with through-hole mounting. It is suitable for use in power supply, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V |
Request a Quote
Clients Also Buy
AO4266
MOSFET N-CH 60V 10A 8SO
AOL1432
MOSFET N-CH 25V 12A/44A ULTRASO8
AOD600A70
MOSFET N-CH 700V 8.5A TO252
