AOWF10N60C
NManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Alpha & Omega Semiconductor Inc. AOWF10N60C is an N-Channel MOSFET designed for high-voltage applications. This through-hole component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 10A at 25°C (Tc). With a maximum power dissipation of 28W (Tc) and a low on-resistance of 750mOhm at 5A and 10V, it offers efficient power switching. The device has a gate charge (Qg) of 40 nC at 10V and an input capacitance (Ciss) of 1600 pF at 25V. Operating within a temperature range of -55°C to 150°C (TJ), the AOWF10N60C is suitable for use in power supply units, lighting, and industrial motor control applications. It is supplied in a TO-262F package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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