AOW7S60
MOSFET N-CH 600V 7A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel Power MOSFET, AOW7S60, features a 600V drain-source voltage and 7A continuous drain current. This through-hole component is housed in a TO-262 package. With a maximum power dissipation of 104W at 25°C case temperature, it offers a low on-resistance of 600mOhm at 3.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 8.2 nC and input capacitance (Ciss) of 372 pF at 100V. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in power supply, industrial, and lighting sectors.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 100 V |
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