AOW4S60
MOSFET N-CH 600V 4A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOW4S60, offers a 600V drain-source voltage with a continuous drain current of 4A at 25°C. This through-hole component, packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA (TO-262-3 Long Leads) format, features a maximum power dissipation of 83W at a case temperature. Key electrical characteristics include a low on-resistance of 900mOhm at 2A and 10V, an input capacitance (Ciss) of 263pF at 100V, and a gate charge (Qg) of 6nC at 10V. The device operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power supply units, industrial automation, and lighting control systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 263 pF @ 100 V |
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