AOW29S50
MOSFET N-CH 500V 29A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ series AOW29S50 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 29 A at 25°C, with a maximum power dissipation of 357 W at the same temperature. The device exhibits a low on-resistance (Rds On) of 150 mOhm at 14.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 26.6 nC and input capacitance (Ciss) of 1312 pF at 100 V. Packaged in a TO-262-3 Long Leads format, the AOW29S50 is suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component finds application in power supply units, motor control, and industrial power switching.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1312 pF @ 100 V |
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