AOW298
MOSFET N-CH 100V 9A/58A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOW298 is an N-Channel MOSFET designed for demanding power applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current capability of 9A at typical ambient temperature (Ta) and 58A at case temperature (Tc). With a low on-resistance (Rds On) of 14.5mOhm at 20A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 2.1W at ambient and 100W at case temperature, with a junction-to-case thermal resistance suitable for efficient heat management. Key parameters include a gate charge (Qg) of 27 nC at 10V and input capacitance (Ciss) of 1670 pF at 50V. Packaged in a TO-262-3 (I2PAK) configuration for through-hole mounting, it operates across a wide temperature range of -55°C to 175°C. The AOW298 is utilized in sectors such as industrial power supplies and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 50 V |
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