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AOW296

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AOW296

MOSFET N-CHANNEL 100V 70A TO262

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AlphaSGT™ series AOW296 is a 100V N-Channel MOSFET designed for high-performance power applications. This through-hole component, housed in a TO-262 package, offers a continuous drain current of 70A at 25°C with a maximum power dissipation of 104W. Key electrical characteristics include a drain-to-source voltage (Vdss) of 100V and a low on-resistance (Rds On) of 9.7mOhm at 20A and 10V Vgs. The device features a gate charge (Qg) of 52 nC at 10V and an input capacitance (Ciss) of 2785 pF at 50V. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3.4V at 250µA, it is suitable for demanding switching applications. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power supplies, industrial automation, and automotive systems.

Additional Information

Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs9.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)104W (Tc)
Vgs(th) (Max) @ Id3.4V @ 250µA
Supplier Device PackageTO-262
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2785 pF @ 50 V

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