AOW292
MOSFET N-CH 100V 105A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOW292. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 105A at the case temperature. The AOW292 offers a low on-resistance (Rds On) of 4.1mOhm at 20A and 10V, with a gate-source threshold voltage (Vgs(th)) of 3.4V. It has a maximum gate charge (Qg) of 126 nC and input capacitance (Ciss) of 6775 pF. Designed for through-hole mounting in a TO-262 package, this MOSFET operates across a temperature range of -55°C to 175°C. Its substantial power dissipation capability of 300W at the case temperature makes it suitable for applications in power supply, industrial motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 300W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6775 pF @ 50 V |
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