AOW2918
MOSFET N-CH 100V 13A/90A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOW2918. This device features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 13A at 25°C (Ta) and 90A at 25°C (Tc). The Rds On is specified at a maximum of 7mOhm at 20A, 10V. With a total power dissipation of 2.1W (Ta) and 267W (Tc), this MOSFET is suitable for demanding applications. Key parameters include a gate charge (Qg) of 53 nC at 10V and input capacitance (Ciss) of 3430 pF at 50V. The AOW2918 is housed in a TO-262-3 Long Leads package, also known as I2PAK or TO-262AA, and is supplied in tubes. This component operates within a temperature range of -55°C to 175°C (TJ). Its specifications make it applicable in power conversion and industrial power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 267W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 50 V |
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