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AOW284

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AOW284

MOSFET N-CH 80V 15A/105A TO262

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AlphaMOS AOW284 is an N-Channel MOSFET designed for robust power handling. This through-hole component features a drain-source voltage of 80 V and a continuous drain current of 15 A at 25°C ambient, scaling to 105 A when measured at the case. With a maximum power dissipation of 1.9 W (ambient) and 250 W (case), it offers excellent thermal performance. Key electrical characteristics include a low on-resistance of 4.3 mOhm at 20 A and 10 V, and a gate charge of 100 nC at 10 V. The input capacitance (Ciss) is a maximum of 5154 pF at 40 V. Operating across a wide temperature range of -55°C to 175°C, this device is packaged in a TO-262-3 Long Leads, I2PAK, or TO-262AA configuration, suitable for applications in industrial automation, power supplies, and automotive systems.

Additional Information

Series: AlphaMOSRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id3.3V @ 250µA
Supplier Device PackageTO-262
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5154 pF @ 40 V

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