AOW25S65
MOSFET N-CH 650V 25A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOW25S65 is an N-Channel Power MOSFET from the aMOS™ series. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous Drain Current (Id) of 25A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 190mOhm at 12.5A and 10V gate drive. With a high power dissipation capability of 357W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 26.4 nC at 10V and input capacitance (Ciss) of 1278 pF at 100V. The AOW25S65 utilizes advanced MOSFET technology and is housed in a TO-262-3 Long Leads package, facilitating through-hole mounting. This component finds application in power supply units, industrial motor control, and renewable energy systems. Operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1278 pF @ 100 V |
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