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AOW2502

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AOW2502

MOSFET N-CH 150V 16A/106A TO262

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOW2502 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole device features a drain-source voltage (Vds) of 150V, with a continuous drain current (Id) rating of 16A at 25°C ambient and 106A at 25°C case temperature. Its low on-resistance (Rds On) of 10.7mOhm at 20A and 10V gate drive ensures minimal conduction losses. The AOW2502 offers a maximum power dissipation of 6.2W (Ta) and 277W (Tc), supported by a typical gate charge (Qg) of 60 nC at 10V. With input capacitance (Ciss) of 3010 pF at 75V and an operating temperature range of -55°C to 150°C, this component is well-suited for use in industrial power supplies, motor control, and electric vehicle systems. The device is packaged in a TO-262-3 Long Leads configuration.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs10.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6.2W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id5.1V @ 250µA
Supplier Device PackageTO-262
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3010 pF @ 75 V

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