AOW15S65
MOSFET N-CH 650V 15A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel Power MOSFET, part number AOW15S65. This device features a 650V drain-source breakdown voltage and a continuous drain current rating of 15A at 25°C (Tc), with a maximum power dissipation of 208W (Tc). The AOW15S65 offers a maximum on-resistance of 290mOhm at 7.5A and 10V gate drive. Key characteristics include a gate charge of 17.2 nC (max) at 10V and input capacitance of 841 pF (max) at 100V. The component is housed in a TO-262 package with long leads, suitable for through-hole mounting. This MOSFET is utilized in power conversion applications across various industrial sectors.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 841 pF @ 100 V |
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