AOW12N60
MOSFET N-CH 600V 12A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOW12N60 is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 600V. This device offers a continuous drain current of 12A at 25°C (Tc) and a maximum power dissipation of 278W (Tc). The Rds On is specified at a maximum of 550mOhm at 6A and 10V gate drive. Key parameters include a gate charge (Qg) of 50 nC @ 10V and input capacitance (Ciss) of 2100 pF @ 25V. The AOW12N60 is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA through-hole format, suitable for demanding applications across power supply, lighting, and industrial control sectors. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
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