AOW11S65
MOSFET N-CH 650V 11A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOW11S65, features a 650V Vdss rating and 11A continuous drain current at 25°C. This component offers a maximum Rds On of 399mOhm at 5.5A, 10V Vgs, with a gate charge of 13.2nC at 10V. The input capacitance (Ciss) is a maximum of 646pF at 100V. Designed for through-hole mounting in a TO-262-3 Long Leads package, it dissipates up to 198W. This device is suitable for applications requiring high voltage switching, including power supply units and industrial motor control. The operating temperature range is -55°C to 150°C.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 198W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 100 V |
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