AOW11S60
MOSFET N-CH 600V 11A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOW11S60 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 11A at 25°C. The device offers a maximum power dissipation of 178W (Tc) and a low Rds On of 399mOhm at 3.8A and 10V gate drive. Key parameters include a gate charge (Qg) of 11 nC at 10V and input capacitance (Ciss) of 545 pF at 100V. The AOW11S60 is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
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