AOW11N60
MOSFET N-CH 600V 11A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOW11N60 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current of 11A at 25°C (Tc) and a maximum power dissipation of 272W (Tc). Key electrical parameters include a low on-resistance of 700mOhm at 5.5A and 10V gate drive, with a Ciss of 1990pF at 25V and Qg of 37nC at 10V. The AOW11N60 is housed in a TO-262-3 long leads package, suitable for through-hole mounting. This device operates reliably across a wide temperature range of -55°C to 150°C (TJ). Applications include power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 272W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 25 V |
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