AOW10T60P
MOSFET N-CH 600V 10A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOW10T60P is a Power MOSFET featuring an N-Channel configuration for high-efficiency switching applications. This component boasts a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C. With a maximum power dissipation of 208W (Tc), it is designed for robust performance in demanding environments. Key electrical characteristics include a low on-resistance (Rds On) of 700mOhm at 5A and 10V, and a gate charge (Qg) of 40 nC at 10V. The input capacitance (Ciss) is specified at a maximum of 1595 pF at 100V. This through-hole device is housed in a TO-262 package, suitable for applications in industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1595 pF @ 100 V |
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