AOW10T60
MOSFET N-CHANNEL 600V 10A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOW10T60 is a 600V N-Channel MOSFET designed for high-voltage applications. This component offers a continuous drain current of 10A at 25°C and a maximum power dissipation of 208W (Tc). Key electrical characteristics include a Drain to Source Voltage (Vdss) of 600V and a typical Rds On of 700mOhm at 5A, 10V. The device features a gate charge of 35 nC (Max) at 10V and input capacitance (Ciss) of 1346 pF (Max) at 100V. Packaged in a TO-262-3 Long Leads (I2PAK) for through-hole mounting, it operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1346 pF @ 100 V |
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