AOW10N65
MOSFET N-CH 650V 10A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOW10N65 is a 650V N-Channel Power MOSFET designed for high-efficiency applications. This component features a continuous drain current of 10A at 25°C (Tc) and a maximum power dissipation of 250W (Tc). The AOW10N65 offers a low on-resistance (Rds On) of 1 Ohm maximum at 5A, 10V, with a gate-source voltage (Vgs) tolerance of ±30V. Key electrical specifications include a gate charge (Qg) of 33 nC maximum at 10V and an input capacitance (Ciss) of 1645 pF maximum at 25V. This MOSFET is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting. The AOW10N65 is utilized in industries such as industrial power supplies, lighting, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1645 pF @ 25 V |
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