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AOW10N65

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AOW10N65

MOSFET N-CH 650V 10A TO262

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOW10N65 is a 650V N-Channel Power MOSFET designed for high-efficiency applications. This component features a continuous drain current of 10A at 25°C (Tc) and a maximum power dissipation of 250W (Tc). The AOW10N65 offers a low on-resistance (Rds On) of 1 Ohm maximum at 5A, 10V, with a gate-source voltage (Vgs) tolerance of ±30V. Key electrical specifications include a gate charge (Qg) of 33 nC maximum at 10V and an input capacitance (Ciss) of 1645 pF maximum at 25V. This MOSFET is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting. The AOW10N65 is utilized in industries such as industrial power supplies, lighting, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs1Ohm @ 5A, 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-262
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1645 pF @ 25 V

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