AOW10N60
MOSFET N-CH 600V 10A TO262Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOW10N60 is a 600V N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current capability of 10A at 25°C with a maximum power dissipation of 250W (Tc). The device offers a low on-resistance of 750mOhm maximum at 5A, 10V, and a gate charge of 40nC at 10V. Key parameters include a Vgs(th) of 4.5V at 250µA and an input capacitance (Ciss) of 1600pF maximum at 25V. The AOW10N60 is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting. This MOSFET is utilized in industries such as industrial power supplies and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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