AOV20S60
MOSFET N-CH 600V 3.6A/18A 4DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel Power MOSFET, part number AOV20S60, offers a 600V drain-source breakdown voltage. This device features a continuous drain current capability of 3.6A at ambient temperature (Ta) and 18A at case temperature (Tc). With a maximum Rds(on) of 250mOhm at 10A and 10V, it is designed for efficient switching applications. The AOV20S60 has low input capacitance of 1038pF (max) at 100V and a gate charge of 20nC (max) at 10V. Its high power dissipation capability reaches 8.3W (Ta) and 278W (Tc). Packaged in a 4-DFN (8x8) footprint for surface mounting, this MOSFET operates across a wide temperature range from -55°C to 150°C. It is suitable for applications in power supplies, industrial automation, and electric vehicle charging.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 278W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | 4-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1038 pF @ 100 V |
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