AOV15S60
MOSFET N-CH 600V 520MA/12A 4DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOV15S60, offers a 600 V drain-source breakdown voltage. This device features a continuous drain current capability of 520 mA at ambient temperature and 12 A at case temperature, with a maximum power dissipation of 8.3 W (Ta) and 208 W (Tc). The AOV15S60 is housed in a 4-DFN (8x8) package for surface mounting. Key electrical parameters include a maximum Rds(on) of 360 mOhm at 7.5 A and 10 V gate-source voltage, and a gate charge (Qg) of 15.6 nC at 10 V. Input capacitance (Ciss) is specified at a maximum of 717 pF at 100 V. This MOSFET is suitable for applications in power supply, lighting, and industrial motor control. It operates within a junction temperature range of -55°C to 150°C. The component is supplied in Tape & Reel packaging.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 520mA (Ta), 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | 4-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 717 pF @ 100 V |
Request a Quote
Clients Also Buy
AOB27S60L
MOSFET N-CH 600V 27A TO263
AOD4S60
MOSFET N-CH 600V 4A TO252
AOTF15S60L
MOSFET N-CH 600V 15A TO220-3F
