AOV11S60
MOSFET N-CH 600V 650MA/8A 4DFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOV11S60, features a 600V drain-source breakdown voltage. This surface mount device, in a 4-DFN (8x8) package, offers a continuous drain current of 650mA at ambient temperature and 8A at case temperature. The AOV11S60 exhibits a maximum Rds On of 500mOhm at 3.8A and 10V drive voltage, with a gate charge of 11nC at 10V. Maximum power dissipation is rated at 8.3W (Ta) and 156W (Tc). Typical applications include power supply units and lighting systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 650mA (Ta), 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | 4-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
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