AOUS66923
MOSFET N-CH 100V 16.5A ULTRASO-8Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AlphaSGT™ AOUS66923 is an N-channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 16.5 A at ambient temperature and 58 A at case temperature. With a low on-resistance (Rds On) of 11 mOhm at 20 A and 10 V, it ensures efficient power transfer. The AOUS66923 is housed in an UltraSO-8™ package, suitable for surface mounting. Key electrical parameters include a gate charge of 35 nC (max) at 10 V and input capacitance (Ciss) of 1725 pF (max) at 50 V. Its power dissipation is rated at 6.2 W (Ta) and 73 W (Tc). Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in power supply, automotive, and industrial sectors.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 73W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | UltraSO-8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 50 V |
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