AOUS66920
NManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AlphaSGT™ AOUS66920 is an N-Channel power MOSFET designed for demanding applications. This component features a 100 V drain-source breakdown voltage and a continuous drain current capability of 19.5 A at ambient temperature (25°C) and 69 A at case temperature (25°C). With a low on-resistance of 8.2 mOhm maximum at 20 A and 10 V, it offers efficient power delivery. The AOUS66920 supports a gate drive range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V and a threshold voltage of 2.5 V at 250 µA. It boasts a maximum power dissipation of 6.2 W at ambient and 86 W at case temperature. The device is housed in an UltraSO-8™ package, suitable for surface mounting. Typical applications include power supplies, motor drives, and battery management systems.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Ta), 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 86W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | UltraSO-8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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