AOUS66620
NManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AlphaSGT™ N-Channel MOSFET, part number AOUS66620, offers a 60 V drain-source voltage and a continuous drain current of 19.5 A at 25°C ambient, or 46 A at 25°C case temperature. This UltraSO-8™ packaged device features a maximum Rds(On) of 9 mOhm at 20 A and 10 Vgs. Gate charge (Qg) is 25 nC maximum at 10 Vgs, and input capacitance (Ciss) is 1070 pF maximum at 30 Vds. Power dissipation is rated at 6.2 W (Ta) and 52 W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for power management applications across various industries, including automotive and industrial electronics.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | UltraSO-8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1070 pF @ 30 V |
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