AOUS66616
MOSFET N-CH 60V 33A/92A ULTRASO8Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc.'s AOUS66616 is an N-Channel AlphaSGT™ MOSFET designed for demanding power applications. This device features a 60V drain-source voltage (Vdss) and offers continuous drain current capabilities of 33A at ambient temperature (Ta) and 92A at case temperature (Tc). With a maximum on-resistance (Rds On) of 3.3mOhm at 20A and 10V gate-source drive, it ensures low conduction losses. The AOUS66616 boasts a maximum power dissipation of 6.2W (Ta) and 92.5W (Tc), supported by a low thermal resistance in its UltraSO-8™ package. Key parameters include a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 2870 pF at 30V. This component is suitable for power management, automotive, and industrial equipment. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 92A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 92.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Supplier Device Package | UltraSO-8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2870 pF @ 30 V |
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