AOUS66416
MOSFET N-CH 40V 33A/69A ULTRASO8Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AlphaSGT™ series N-Channel MOSFET, part number AOUS66416, offers a 40V drain-source breakdown voltage. This device features a low on-resistance of 3.3mOhm at 20A and 10V Vgs, with a continuous drain current capability of 33A at 25°C ambient and 69A at 25°C case temperature. Power dissipation is rated at 6.2W (ambient) and 73.5W (case). The AOUS66416 utilizes Metal Oxide technology and is housed in a surface mount UltraSO-8™ package, supplied on tape and reel. Key parameters include a maximum gate charge of 50 nC at 10V Vgs and input capacitance of 2575 pF at 20V Vds. It is suitable for applications requiring high current density and low conduction losses, commonly found in power management systems and high-efficiency power conversion circuits. Operating temperature range is -55°C to 150°C.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 73.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | UltraSO-8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2575 pF @ 20 V |
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