AOUS66414
MOSFET N-CH 40V 40A/92A ULTRASO8Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOUS66414 is a high-performance N-Channel AlphaSGT™ MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage (Vdss) and boasts a continuous drain current capability of 40A at ambient temperature and 92A at case temperature. With an Rds(on) of 2.2mOhm at 20A and 10V, it offers low conduction losses. The AOUS66414 supports drive voltages from 4.5V to 10V, with a gate-source threshold voltage (Vgs(th)) of 2.3V at 250µA. Its low gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 4350 pF at 20V facilitate efficient switching. The UltraSO-8™ package ensures excellent thermal performance, with a maximum power dissipation of 6.2W (Ta) and 92W (Tc). Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for automotive, industrial power control, and high-efficiency power supply designs. The component is supplied in Tape & Reel packaging.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta), 92A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.2W (Ta), 92W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | UltraSO-8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 20 V |
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