AOU7S65
MOSFET N-CH 600V 7A TO251-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ series AOU7S65 is an N-Channel power MOSFET in a TO-251-3 package. This device features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7A at 25°C. The on-resistance (Rds On) is specified at a maximum of 650mOhm at 3.5A and a gate-source voltage (Vgs) of 10V. With a maximum power dissipation of 89W at 25°C (Tc), this component is suitable for applications requiring robust switching performance. Key parameters include a gate charge (Qg) of 9.2 nC and input capacitance (Ciss) of 434 pF, both specified at relevant operating voltages. The operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: aMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 434 pF @ 100 V |
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