AOU7S60
MOSFET N-CH 600V 7A TO251-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ AOU7S60 is a 600V N-Channel MOSFET designed for high-efficiency power conversion applications. Featuring a continuous drain current capability of 7A at 25°C (Tc) and a maximum power dissipation of 83W (Tc), this component is housed in a compact TO-251-3 (IPAK) package for through-hole mounting. Key electrical specifications include a drain-to-source voltage (Vdss) of 600V, a typical on-resistance (Rds On) of 600mOhm at 3.5A and 10V drive voltage, and a gate charge (Qg) of 8.2 nC at 10V. Input capacitance (Ciss) is rated at 372 pF. Operating across an extended temperature range of -55°C to 150°C (TJ), the AOU7S60 is suitable for use in industrial power supplies, lighting, and motor drive systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 100 V |
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