AOU3N60
MOSFET N-CH 600V 2.5A TO251-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOU3N60, an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 2.5A at 25°C. The Rds On is specified at a maximum of 3.5 Ohms when driven at 10V with a drain current of 1.25A. With a maximum power dissipation of 56.8W at 25°C (Tc), this MOSFET is suitable for power conversion and switching applications across various industrial sectors. The AOU3N60 is housed in a TO-251-3 (IPAK) package, facilitating through-hole mounting. Key parameters include a gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 370 pF at 25V. The operating temperature range is -50°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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